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| CMPT3640 PNP SILICON TRANSISTOR Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CMPT3640 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for saturated switching applications. Marking code is C2J. SOT-23 CASE MAXIMUM RATINGS (TA=25oC) SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg JA UNITS V V V mA mW oC oC/W Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 12 12 4.0 80 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICES ICES IB BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) hFE TEST CONDITIONS VCE=6.0V VCE=6.0V, TA=65oC VCE=6.0V, VEB=0 IC=100A IC=10mA IE=100A IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA, TA=65oC IC=10mA, IB=0.5mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=0.3V, IC=10mA MIN MAX 10 10 10 UNITS nA A nA V V V V V V V V V 12 12 4.0 0.20 0.60 0.25 0.95 1.00 1.50 120 0.75 0.80 30 168 SYMBOL hFE fT Cob Cib td tr ts tf ton ton toff toff TEST CONDITIONS VCE=1.0V, IC=50mA VCE=5.0V, IC=10mA, f=100MHz VCB=5.0V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA VCC=6.0V, IC=50mA, IB1=IB2=5.0mA VCC=6.0V, IC=50mA, IB1=IB2=5.0mA VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA VCC=1.5V, IC=10mA, IB1=0.5mA VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA VCC=1.5V, IC=10mA, IB1=IB2=0.5mA MIN 20 500 MAX UNITS MHz pF pF ns ns ns ns ns ns ns ns 3.5 3.5 10 30 20 12 25 60 35 75 All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 169 |
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